DSS3515M-7B
- Manufacturer Diodes Incorporated
- Part Number DSS3515M-7B
- Description Bipolar Transistors - BJT SS Low Sat Transisto X1-DFN1006-3,10K
- Category Bipolar Transistors - BJT
Specifications
| Package | DFN1006-3 |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | - 6 V |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | Diodes Incorporated |
| Collector- Emitter Voltage VCEO Max | - 15 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 340 MHz |
| Maximum DC Collector Current | - 1 A |
| RoHS | Y |
| Continuous Collector Current | - 500 mA |
| Collector-Emitter Saturation Voltage | - 250 mV |
| Configuration | Single |
| Subcategory | Transistors |
| Series | DSS35 |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | - 15 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 250 mW |
| DC Collector/Base Gain hfe Min | 90 at - 500 mA, - 2 V |
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