DSM80100M-7
- Manufacturer Diodes Incorporated
- Part Number DSM80100M-7
- Description Bipolar Transistors - BJT PNP Trans Dual 400mW Switching -80V
- Category Bipolar Transistors - BJT
Specifications
| Package | SOT-26-6 |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | - 4 V |
| Width | 1.6 mm |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - BJT |
| Brand | Diodes Incorporated |
| DC Current Gain hFE Max | 500 at - 10 mA, - 1 V |
| Collector- Emitter Voltage VCEO Max | - 80 V |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Length | 3 mm |
| Maximum DC Collector Current | - 1 A |
| RoHS | Y |
| Continuous Collector Current | - 500 mA |
| Collector-Emitter Saturation Voltage | - 250 mV |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | DSM801 |
| Height | 1.1 mm |
| Packaging | |
| Collector- Base Voltage VCBO | - 80 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 600 mW |
| DC Collector/Base Gain hfe Min | 120 |
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