DN0150BLP4-7B
- Manufacturer Diodes Incorporated
- Part Number DN0150BLP4-7B
- Description Bipolar Transistors - BJT SS Mid-Perf Transist X1-DFN1006-3,10K
- Category Bipolar Transistors - BJT
Specifications
| Package | DFN1006H4-3 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 5 V |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | Diodes Incorporated |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 60 MHz |
| Maximum DC Collector Current | 200 mA |
| RoHS | Y |
| Continuous Collector Current | 100 mA |
| Collector-Emitter Saturation Voltage | 250 mV |
| Configuration | Single |
| Subcategory | Transistors |
| Series | DN0150 |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | 60 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 450 mW |
| DC Collector/Base Gain hfe Min | 200 |
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