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DN0150BLP4-7

  • Manufacturer Diodes Incorporated
  • Part Number DN0150BLP4-7
  • Description Bipolar Transistors - BJT NPN 50V 0.1A 3-PIN SMT
  • Category Bipolar Transistors - BJT
Specifications
Package DFN-3
Min. Pack 1
Transistor Polarity NPN
Emitter- Base Voltage VEBO 5 V
Width 0.6 mm
Mounting Style SMD/SMT
Product Category Bipolar Transistors - BJT
Brand Diodes Incorporated
DC Current Gain hFE Max 200 at 2 mA, 6 V
Collector- Emitter Voltage VCEO Max 50 V
Configuration Single
Maximum Operating Temperature + 150 C
Length 1 mm
Maximum DC Collector Current 0.1 A
RoHS Y
Gain Bandwidth Product fT 60 MHz
Product Type BJTs - Bipolar Transistors
Subcategory Transistors
Series DN0150
Height 0.35 mm
Packaging
Collector- Base Voltage VCBO 60 V
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 450 mW
DC Collector/Base Gain hfe Min 200

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