DMTH10H005LCT
- Manufacturer Diodes Incorporated
- Part Number DMTH10H005LCT
- Description MOSFET MOSFET BVDSS: 61V-100V
- Category MOSFET
Specifications
| Package | TO-220AB-3 |
| Packaging | Tube |
| Min. Pack | 50 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.4 V |
| Qg - Gate Charge | 114 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 53.1 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | Diodes Incorporated |
| Unit Weight | 0.063493 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 140 A |
| Rds On - Drain-Source Resistance | 4 mOhms |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 83.6 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | DMTH10H005 |
| Typical Turn-On Delay Time | 25 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 187 W |
| Rise Time | 26.9 ns |
| Technology | Si |
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