DMT6007LFGQ-13
- Manufacturer Diodes Incorporated
- Part Number DMT6007LFGQ-13
- Description MOSFET MOSFET BVDSS: 41V-60V
- Category MOSFET
Specifications
| Package | PowerDI-3333-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Transistor Polarity | N-Channel |
| Rds On - Drain-Source Resistance | 6 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 800 mV |
| Qg - Gate Charge | 41.3 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 9.7 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Diodes Incorporated |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 100 S |
| Id - Continuous Drain Current | 80 A |
| Qualification | AEC-Q101 |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 23.4 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Packaging | |
| Typical Turn-On Delay Time | 5.7 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 62.5 W |
| Rise Time | 4.3 ns |
| Technology | Si |
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