DMT3006LPB-13
- Manufacturer Diodes Incorporated
- Part Number DMT3006LPB-13
- Description MOSFET MOSFET BVDSS 25V-30V
- Category MOSFET
Specifications
| Package | PowerDI5060-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Qg - Gate Charge | 12.6 nC, 16.7 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 1.8 ns, 4.6 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Diodes Incorporated |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 N-Channel |
| Id - Continuous Drain Current | 35 A, 50 A |
| Rds On - Drain-Source Resistance | 11.1 mOhms, 6 mOhms |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 10.2 ns, 13.5 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Packaging | |
| Typical Turn-On Delay Time | 4.6 ns, 3.5 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 30 W |
| Rise Time | 3.3 ns, 5.5 ns |
| Technology | Si |
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