DMT10H025SSS-13
- Manufacturer Diodes Incorporated
- Part Number DMT10H025SSS-13
- Description MOSFET MOSFET BVDSS: 61V-100V
- Category MOSFET
Specifications
| Package | SO-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 21.4 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Fall Time | 13.7 ns |
| Product Category | MOSFET |
| Brand | Diodes Incorporated |
| Number of Channels | 1 Channel |
| Product Type | MOSFET |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 7.4 A |
| Rds On - Drain-Source Resistance | 23 mOhms |
| RoHS | Y |
| Configuration | Single |
| Typical Turn-Off Delay Time | 27.5 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Mounting Style | SMD/SMT |
| Typical Turn-On Delay Time | 8.2 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 12.9 W |
| Rise Time | 11.2 ns |
| Technology | Si |
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