DMT10H015LFG-7
- Manufacturer Diodes Incorporated
- Part Number DMT10H015LFG-7
- Description MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W
- Category MOSFET
Specifications
| Package | PowerDI3333-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Width | 3.3 mm |
| Qg - Gate Charge | 33.3 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Fall Time | 8.1 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Diodes Incorporated |
| Unit Weight | 0.002540 oz |
| Number of Channels | 1 Channel |
| Tradename | PowerDI |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 42 A |
| Length | 3.3 mm |
| Rds On - Drain-Source Resistance | 13.5 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 19.7 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | DMT10 |
| Height | 0.8 mm |
| Packaging | |
| Typical Turn-On Delay Time | 6.5 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 2 W |
| Rise Time | 7 ns |
| Technology | Si |
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