DMP6110SVT-13
- Manufacturer Diodes Incorporated
- Part Number DMP6110SVT-13
- Description MOSFET 60V Dual P-Ch Enh FET 60Vds 20Vgs
- Category MOSFET
Specifications
| Package | TSOT-26-6 |
| Packaging | Reel |
| Min. Pack | 10,000 |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Transistor Polarity | P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 17.2 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 42 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Diodes Incorporated |
| Unit Weight | 0.000459 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 P-Channel |
| Id - Continuous Drain Current | 7.3 A |
| Rds On - Drain-Source Resistance | 105 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 34 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | DMP6110 |
| Typical Turn-On Delay Time | 4.4 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1.2 W |
| Rise Time | 23 ns |
| Technology | Si |
Need pricing on DMP6110SVT-13?
Tell us your quantity and target price. We reply the same business day.