DMP21D0UFB-7B
- Manufacturer Diodes Incorporated
- Part Number DMP21D0UFB-7B
- Description MOSFET 20V P-Ch Enh FET Pd .43W -8Vgss -5.0A
- Category MOSFET
Specifications
| Package | X1-DFN1006-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 700 mV |
| Width | 0.6 mm |
| Qg - Gate Charge | 1.5 nC |
| Vgs - Gate-Source Voltage | 8 V |
| Fall Time | 18.5 ns |
| Mounting Style | SMD/SMT |
| Product | MOSFET |
| Product Category | MOSFET |
| Brand | Diodes Incorporated |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 P-Channel, ESD |
| Forward Transconductance - Min | 50 mS |
| Id - Continuous Drain Current | 770 mA |
| Length | 1 mm |
| Rds On - Drain-Source Resistance | 960 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 31.7 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | DMP21D0UFB |
| Height | 0.5 mm |
| Packaging | |
| Typical Turn-On Delay Time | 7.1 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 430 mW |
| Rise Time | 8 ns |
| Technology | Si |
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