DMP2100UFU-7
- Manufacturer Diodes Incorporated
- Part Number DMP2100UFU-7
- Description MOSFET Dual P-Ch Enh FET 20Vdss 10Vgss 0.9W
- Category MOSFET
Specifications
| Package | U-DFN2030-6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.4 V |
| Qg - Gate Charge | 21.4 nC, 21.4 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Fall Time | 396 ns, 396 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Diodes Incorporated |
| Unit Weight | 0.000423 oz |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 P-Channel |
| Id - Continuous Drain Current | 5.7 A |
| Rds On - Drain-Source Resistance | 25 mOhms, 25 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 626 ns, 626 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | DMP2100 |
| Packaging | |
| Typical Turn-On Delay Time | 70 ns, 70 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1.9 W |
| Rise Time | 144 ns, 144 ns |
| Technology | Si |
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