DMNH6011LK3-13
- Manufacturer Diodes Incorporated
- Part Number DMNH6011LK3-13
- Description MOSFET MOSFET BVDSS: 41V~60V TO252 T&R 2.5K
- Category MOSFET
Specifications
| Package | TO-252-3 |
| Packaging | Reel |
| Min. Pack | 2,500 |
| Vds - Drain-Source Breakdown Voltage | 55 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Qg - Gate Charge | 49.1 nC |
| Vgs - Gate-Source Voltage | 12 V |
| Fall Time | 10.2 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Diodes Incorporated |
| Unit Weight | 0.011640 oz |
| Number of Channels | 1 Channel |
| Product Type | MOSFET |
| Maximum Operating Temperature | + 175 C |
| Id - Continuous Drain Current | 80 A |
| Rds On - Drain-Source Resistance | 12 mOhms |
| Configuration | Single |
| Typical Turn-Off Delay Time | 28.2 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Typical Turn-On Delay Time | 5.9 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 3 W |
| Rise Time | 8.7 ns |
| Technology | Si |
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