DMN95H2D2HCTI
- Manufacturer Diodes Incorporated
- Part Number DMN95H2D2HCTI
- Description MOSFET MOSFETBVDSS: >800V
- Category MOSFET
Specifications
| Package | ITO-220AB-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 950 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 20.3 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Fall Time | 31 ns |
| Product Category | MOSFET |
| Brand | Diodes Incorporated |
| Unit Weight | 0.065257 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 6 A |
| Rds On - Drain-Source Resistance | 1.7 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 51 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Mounting Style | Through Hole |
| Typical Turn-On Delay Time | 39 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 40 W |
| Rise Time | 49 ns |
| Technology | Si |
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