DMN63D8L-13
- Manufacturer Diodes Incorporated
- Part Number DMN63D8L-13
- Description MOSFET N-Ch Enh Mode FET 30V 20Vgss 350mW
- Category MOSFET
Specifications
| Package | SOT-23-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.5 V |
| Width | 1.3 mm |
| Qg - Gate Charge | 900 pC |
| Vgs - Gate-Source Voltage | 10 V |
| Fall Time | 16.7 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Diodes Incorporated |
| Unit Weight | 0.000282 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 80 mS |
| Id - Continuous Drain Current | 350 mA |
| Length | 2.9 mm |
| Rds On - Drain-Source Resistance | 2.8 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 11.4 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | DMN63D8L |
| Height | 0.975 mm |
| Packaging | |
| Typical Turn-On Delay Time | 2.3 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 350 mW |
| Rise Time | 3.9 ns |
| Technology | Si |
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