DMN61D8LVTQ-13
- Manufacturer Diodes Incorporated
- Part Number DMN61D8LVTQ-13
- Description MOSFET N-Ch Enh Mode FET 41 to 60V Low Rdson
- Category MOSFET
Specifications
| Package | TSOT-26-6 |
| Packaging | Reel |
| Min. Pack | 10,000 |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Transistor Polarity | N-Channel |
| Rds On - Drain-Source Resistance | 1.1 Ohms |
| Vgs th - Gate-Source Threshold Voltage | 1.3 V |
| Width | 1.6 mm |
| Qg - Gate Charge | 740 pC |
| Vgs - Gate-Source Voltage | 12 V |
| Fall Time | 440 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Diodes Incorporated |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 N-Channel |
| Forward Transconductance - Min | 80 mS |
| Id - Continuous Drain Current | 630 mA |
| Length | 2.9 mm |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 582 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | DMN61 |
| Height | 1 mm |
| Typical Turn-On Delay Time | 131 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1.09 W |
| Rise Time | 301 ns |
| Technology | Si |
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