DMN33D8LTQ-7
- Manufacturer Diodes Incorporated
- Part Number DMN33D8LTQ-7
- Description MOSFET MOSFET BVDSS 25V-30V
- Category MOSFET
Specifications
| Package | SOT-523-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | N-Channel |
| Rds On - Drain-Source Resistance | 5 Ohms |
| Vgs th - Gate-Source Threshold Voltage | 0.8 V |
| Qg - Gate Charge | 0.55 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 13.6 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Diodes Incorporated |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 115 mA |
| Qualification | AEC-Q101 |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 18.2 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Packaging | |
| Typical Turn-On Delay Time | 2.9 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 300 mW |
| Rise Time | 2.6 ns |
| Technology | Si |
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