DMN3053L-13
- Manufacturer Diodes Incorporated
- Part Number DMN3053L-13
- Description MOSFET 30V N-Ch Enh FET 12Vgss 0.76W 676pF
- Category MOSFET
Specifications
| Package | SOT-23-3 |
| Packaging | Reel |
| Min. Pack | 10,000 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 600 mV |
| Width | 1.4 mm |
| Qg - Gate Charge | 7.3 nC |
| Vgs - Gate-Source Voltage | 12 V |
| Type | Enhancement Mode MOSFET |
| Fall Time | 32 ns |
| Mounting Style | SMD/SMT |
| Product | Enhancement Mode MOSFET |
| Product Category | MOSFET |
| Brand | Diodes Incorporated |
| Unit Weight | 0.000282 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | - |
| Id - Continuous Drain Current | 4 A |
| Length | 3 mm |
| Rds On - Drain-Source Resistance | 50 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 152 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | DMN3053 |
| Height | 1 mm |
| Typical Turn-On Delay Time | 2 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1.2 W |
| Rise Time | 5.5 ns |
| Technology | Si |
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