DMN3012LDG-7
- Manufacturer Diodes Incorporated
- Part Number DMN3012LDG-7
- Description MOSFET MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 1K
- Category MOSFET
Specifications
| Package | PowerDI3333-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1 V, 750 mV |
| Qg - Gate Charge | 6.1 nC, 12.6 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Fall Time | 2.3 ns, 2.9 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Diodes Incorporated |
| Unit Weight | 0.001552 oz |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Forward Transconductance - Min | 27 S, 46 S |
| Id - Continuous Drain Current | 20 A |
| Rds On - Drain-Source Resistance | 12 mOhms, 6 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 6.4 ns, 12.4 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Packaging | |
| Typical Turn-On Delay Time | 5.1 ns, 4.4 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 2.2 W |
| Rise Time | 2.7 ns, 3.5 ns |
| Technology | Si |
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