DMN2990UDJQ-7
- Manufacturer Diodes Incorporated
- Part Number DMN2990UDJQ-7
- Description MOSFET MOSFETBVDSS: 8V-24V
- Category MOSFET
Specifications
| Package | SOT-963-6 |
| Packaging | Reel |
| Min. Pack | 10,000 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | N-Channel |
| Rds On - Drain-Source Resistance | 600 mOhms, 600 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 400 mV |
| Qg - Gate Charge | 500 pC, 500 pC |
| Vgs - Gate-Source Voltage | 8 V |
| Fall Time | 6.4 ns, 6.4 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Diodes Incorporated |
| Unit Weight | 0.000952 oz |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 N-Channel |
| Forward Transconductance - Min | 180 ms, 180 ms |
| Id - Continuous Drain Current | 450 mA |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 19 ns, 19 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Typical Turn-On Delay Time | 4 ns, 4 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 350 mW |
| Rise Time | 3.3 ns, 3.3 ns |
| Technology | Si |
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