DMN24H11DSQ-13
- Manufacturer Diodes Incorporated
- Part Number DMN24H11DSQ-13
- Description MOSFET MOSFET BVDSS: 101V-250V
- Category MOSFET
Specifications
| Package | SOT-23-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 240 V |
| Transistor Polarity | N-Channel |
| Rds On - Drain-Source Resistance | 11 Ohms |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Qg - Gate Charge | 3.7 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 102.3 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Diodes Incorporated |
| Unit Weight | |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 270 mA |
| Qualification | AEC-Q101 |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 17.5 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Packaging | |
| Typical Turn-On Delay Time | 4.8 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1.2 W |
| Rise Time | 4.7 ns |
| Technology | Si |
Need pricing on DMN24H11DSQ-13?
Tell us your quantity and target price. We reply the same business day.