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DMN2004DWKQ-7

  • Manufacturer Diodes Incorporated
  • Part Number DMN2004DWKQ-7
  • Description MOSFET MOSFET BVDSS: 8V-24V
  • Category MOSFET
Specifications
Package SOT-363-6
Packaging Reel
Min. Pack 3,000
Vds - Drain-Source Breakdown Voltage 20 V
Transistor Polarity N-Channel
Rds On - Drain-Source Resistance 400 mOhms, 400 mOhms
Vgs th - Gate-Source Threshold Voltage 500 mV
Qg - Gate Charge 950 pC, 950 pC
Vgs - Gate-Source Voltage 8 V
Fall Time 10.5 ns, 10.5 ns
Mounting Style SMD/SMT
Product Category MOSFET
Brand Diodes Incorporated
Number of Channels 2 Channel
Configuration Dual
Maximum Operating Temperature + 150 C
Transistor Type 2 N-Channel
Forward Transconductance - Min 200 mS, 200 mS
Id - Continuous Drain Current 540 mA
Qualification AEC-Q101
Product Type MOSFET
Typical Turn-Off Delay Time 13.8 ns, 13.8 ns
Subcategory MOSFETs
Channel Mode Enhancement
Series DMN2004D
Typical Turn-On Delay Time 4.1 ns, 4.1 ns
Minimum Operating Temperature - 65 C
Pd - Power Dissipation 200 mW
Rise Time 7.3 ns, 7.3 ns
Technology Si

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