DMN2004DWKQ-7
- Manufacturer Diodes Incorporated
- Part Number DMN2004DWKQ-7
- Description MOSFET MOSFET BVDSS: 8V-24V
- Category MOSFET
Specifications
| Package | SOT-363-6 |
| Packaging | Reel |
| Min. Pack | 3,000 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | N-Channel |
| Rds On - Drain-Source Resistance | 400 mOhms, 400 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 500 mV |
| Qg - Gate Charge | 950 pC, 950 pC |
| Vgs - Gate-Source Voltage | 8 V |
| Fall Time | 10.5 ns, 10.5 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Diodes Incorporated |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 N-Channel |
| Forward Transconductance - Min | 200 mS, 200 mS |
| Id - Continuous Drain Current | 540 mA |
| Qualification | AEC-Q101 |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 13.8 ns, 13.8 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | DMN2004D |
| Typical Turn-On Delay Time | 4.1 ns, 4.1 ns |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 200 mW |
| Rise Time | 7.3 ns, 7.3 ns |
| Technology | Si |
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