DMN1017UCP3-7
- Manufacturer Diodes Incorporated
- Part Number DMN1017UCP3-7
- Description MOSFET MOSFETBVDSS: 8V-24V
- Category MOSFET
Specifications
| Package | X3-DSN1010-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 12 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 400 mV |
| Qg - Gate Charge | 16 nC |
| Vgs - Gate-Source Voltage | 8 V |
| Fall Time | 7.5 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Diodes Incorporated |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 6.6 S |
| Id - Continuous Drain Current | 7.5 A |
| Rds On - Drain-Source Resistance | 14.1 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 17.9 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Packaging | |
| Typical Turn-On Delay Time | 3.7 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1.47 W |
| Rise Time | 6.3 ns |
| Technology | Si |
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