DMG8822UTS-13
- Manufacturer Diodes Incorporated
- Part Number DMG8822UTS-13
- Description MOSFET N-Ch Dual MOSFET 20V VDSS 8V VGSS
- Category MOSFET
Specifications
| Package | TSSOP-8 |
| Packaging | Reel |
| Min. Pack | 2,500 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 500 mV |
| Qg - Gate Charge | 9.6 nC, 9.6 nC |
| Vgs - Gate-Source Voltage | 8 V |
| Fall Time | 10.1 ns, 10.1 ns |
| Mounting Style | SMD/SMT |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Brand | Diodes Incorporated |
| Unit Weight | 0.006737 oz |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 N-Channel |
| Id - Continuous Drain Current | 4.9 A |
| Rds On - Drain-Source Resistance | 19 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 38.6 ns, 38.6 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | DMG8822 |
| Typical Turn-On Delay Time | 7.8 ns, 7.8 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 870 mW |
| Rise Time | 21.1 ns, 21.1 ns |
| Technology | Si |
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