DMG3N60SJ3
- Manufacturer Diodes Incorporated
- Part Number DMG3N60SJ3
- Description MOSFET MOSFET BVDSS: 501V-650V
- Category MOSFET
Specifications
| Package | TO-251-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 12.6 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Fall Time | 28 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | Diodes Incorporated |
| Unit Weight | 0.011993 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 2.8 A |
| Rds On - Drain-Source Resistance | 3.5 Ohms |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 34 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Typical Turn-On Delay Time | 10.6 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 41 W |
| Rise Time | 22 ns |
| Technology | Si |
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