DMG1023UVQ-13
- Manufacturer Diodes Incorporated
- Part Number DMG1023UVQ-13
- Description MOSFET MOSFET BVDSS: 8V-24V
- Category MOSFET
Specifications
| Package | SOT-563-6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | P-Channel |
| Rds On - Drain-Source Resistance | 25 Ohms |
| Vgs th - Gate-Source Threshold Voltage | 500 mV |
| Qg - Gate Charge | 622 pC |
| Vgs - Gate-Source Voltage | 6 V |
| Fall Time | 8.1 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Diodes Incorporated |
| Number of Channels | 1 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 P-Channel |
| Id - Continuous Drain Current | 1.03 A |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 28.4 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Packaging | |
| Typical Turn-On Delay Time | 5.1 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 530 mW |
| Rise Time | 8.1 ns |
| Technology | Si |
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