DMC6070LND-7
- Manufacturer Diodes Incorporated
- Part Number DMC6070LND-7
- Description MOSFET MOSFET BVDSS
- Category MOSFET
Specifications
| Package | PowerDI3333-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Transistor Polarity | N-Channel, P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1 V, 3 V |
| Qg - Gate Charge | 11.5 nC, 8.9 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 21 ns, 37.8 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Diodes Incorporated |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Id - Continuous Drain Current | 3.1 A, 2.4 A |
| Rds On - Drain-Source Resistance | 60 mOhms, 115 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 61 ns, 79.8 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | DMC6070 |
| Packaging | |
| Typical Turn-On Delay Time | 9.6 ns, 7.6 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1.4 W |
| Rise Time | 11 ns, 11.6 ns |
| Technology | Si |
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