DMC3026LSD-13
- Manufacturer Diodes Incorporated
- Part Number DMC3026LSD-13
- Description MOSFET 30V N & P Comp FET Enh 20Vgss Low Rdson
- Category MOSFET
Specifications
| Package | SO-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | N-Channel, P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 6 nC, 10.9 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 5.3 ns, 40.4 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Diodes Incorporated |
| Unit Weight | 0.002610 oz |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Id - Continuous Drain Current | 6.5 A, 6.2 A |
| Rds On - Drain-Source Resistance | 22 mOhms, 29 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 22.3 ns, 60.5 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | DMC3026 |
| Packaging | |
| Typical Turn-On Delay Time | 3.3 ns, 9.7 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1.2 W |
| Rise Time | 4.4 ns, 17.1 ns |
| Technology | Si |
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