DMC1229UFDB-13
- Manufacturer Diodes Incorporated
- Part Number DMC1229UFDB-13
- Description MOSFET Comp ENH Mode FET 12V Vdss 8V VGss
- Category MOSFET
Specifications
| Package | DFN2020-B-6 |
| Packaging | Reel |
| Min. Pack | 10,000 |
| Vds - Drain-Source Breakdown Voltage | 12 V |
| Transistor Polarity | N-Channel, P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 400 mV, 1 V |
| Qg - Gate Charge | 19.6 nC, 17.9 nC |
| Vgs - Gate-Source Voltage | 8 V |
| Fall Time | 4.1 ns, 26.4 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Diodes Incorporated |
| Unit Weight | 0.000229 oz |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Forward Transconductance - Min | - |
| Id - Continuous Drain Current | 5.6 A, 3.8 A |
| Rds On - Drain-Source Resistance | 17 mOhms, 37 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 16.6 ns, 27.8 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | DMC1229 |
| Typical Turn-On Delay Time | 5 ns, 5.7 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1.4 W |
| Rise Time | 10.5 ns,11.5 ns |
| Technology | Si |
Need pricing on DMC1229UFDB-13?
Tell us your quantity and target price. We reply the same business day.