DDB2U50N08W1RB23BOMA2
- Manufacturer Infineon Technologies
- Part Number DDB2U50N08W1RB23BOMA2
- Description Discrete Semiconductor Modules LOW POWER EASY
- Category Discrete Semiconductor Modules
Specifications
| Package | Module |
| Packaging | Tray |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Transistor Polarity | N-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Width | 33.8 mm |
| Part # Aliases | DDB2U50N08W1R_B23 SP001622470 |
| Type | Rectifier Diode Module |
| Fall Time | 30 ns |
| Vr - Reverse Voltage | 800 V |
| Product | Diode Power Modules |
| Product Category | Discrete Semiconductor Modules |
| If - Forward Current | 50 A |
| Brand | Infineon Technologies |
| Mounting Style | Press Fit |
| Tradename | EasyBRIDGE |
| Product Type | Discrete Semiconductor Modules |
| Maximum Operating Temperature | + 125 C |
| Id - Continuous Drain Current | 50 A |
| Length | 62.8 mm |
| Rds On - Drain-Source Resistance | 20 mOhms |
| RoHS | Y |
| Typical Turn-Off Delay Time | 325 ns |
| Subcategory | Discrete Semiconductor Modules |
| Vf - Forward Voltage | 1.1 V |
| Height | 12 mm |
| Typical Turn-On Delay Time | 100 ns |
| Minimum Operating Temperature | - 40 C |
| Rise Time | 45 ns |
| Technology | SiC |
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