D3S190N65E-T
- Manufacturer D3
- Part Number D3S190N65E-T
- Description MOSFET 190 mOhm 650V
- Category MOSFET
Specifications
| Package | TO-263-3 |
| Packaging | Reel |
| Min. Pack | 800 |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2.3 V |
| Qg - Gate Charge | 28 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Fall Time | 21 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | D3 |
| Number of Channels | 1 Channel |
| Product Type | MOSFET |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Rds On - Drain-Source Resistance | 190 mOhms |
| RoHS | Y |
| Configuration | Single |
| Typical Turn-Off Delay Time | 57 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Typical Turn-On Delay Time | 9 ns |
| Minimum Operating Temperature | - 55 C |
| Rise Time | 8 ns |
| Technology | Si |
Need pricing on D3S190N65E-T?
Tell us your quantity and target price. We reply the same business day.