CXT5551 TR
- Manufacturer Central Semiconductor
- Part Number CXT5551 TR
- Description Bipolar Transistors - BJT NPN 180Vcbo 160Vceo 6.0Vebo 6.0V 600mA
- Category Bipolar Transistors - BJT
Specifications
| Package | SOT-89 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 6 V |
| Part # Aliases | CXT5551 PBFREE TR |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | Central Semiconductor |
| DC Current Gain hFE Max | 250 at 10 mA, 5 V |
| Unit Weight | 0.000529 oz |
| Collector- Emitter Voltage VCEO Max | 160 V |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 300 MHz |
| Maximum DC Collector Current | 600 mA |
| RoHS | Y |
| Collector-Emitter Saturation Voltage | 300 mV |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | CXT5 |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | 75 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 350 mW |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 80 at 10 mA, 5 V |
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