CXDM4060N TR
- Manufacturer Central Semiconductor
- Part Number CXDM4060N TR
- Description MOSFET 40Vds N-Ch Enh FET 20Vgs 6.0A 1.2W
- Category MOSFET
Specifications
| Package | SOT-89 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Transistor Polarity | N-Channel |
| Qg - Gate Charge | 12 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | CXDM4060N PBFREE TR |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Central Semiconductor |
| Unit Weight | 0.004603 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 6 A |
| Rds On - Drain-Source Resistance | 45 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | CXDM |
| Packaging | |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1.2 W |
| Technology | Si |
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