CXDM1002N TR
- Manufacturer Central Semiconductor
- Part Number CXDM1002N TR
- Description MOSFET 100Vds N-Ch Enh FET 20Vgs 2.0A 1.2W 2kV
- Category MOSFET
Specifications
| Package | SOT-89 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.5 V |
| Width | 2.7 mm |
| Qg - Gate Charge | 6 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | CXDM1002N PBFREE TR |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Central Semiconductor |
| Unit Weight | 0.004603 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 2 A |
| Length | 4.7 mm |
| Rds On - Drain-Source Resistance | 140 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 50 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | CWDM |
| Height | 1.7 mm |
| Packaging | |
| Typical Turn-On Delay Time | 32 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1.2 W |
| Technology | Si |
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