CTA2N1P-7-F
- Manufacturer Diodes Incorporated
- Part Number CTA2N1P-7-F
- Description Bipolar Transistors - BJT NPN-TRANS P-CH MFET
- Category Bipolar Transistors - BJT
Specifications
| Package | SOT-363-6 |
| Min. Pack | 1 |
| Transistor Polarity | NPN, PNP |
| Emitter- Base Voltage VEBO | 6 V |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | Diodes Incorporated |
| DC Current Gain hFE Max | 300 |
| Unit Weight | 0.000212 oz |
| Collector- Emitter Voltage VCEO Max | 40 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 250 MHz |
| Maximum DC Collector Current | 600 mA |
| RoHS | Y |
| Continuous Collector Current | 600 mA |
| Collector-Emitter Saturation Voltage | 750 mV |
| Configuration | Dual |
| Subcategory | Transistors |
| Series | CTA2N1P |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | 60 V |
| Pd - Power Dissipation | 150 mW |
| DC Collector/Base Gain hfe Min | 20 at 100 uA, 1 V |
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