CSD87312Q3E
- Manufacturer Texas Instruments
- Part Number CSD87312Q3E
- Description MOSFET Dual 30V N-CH NexFET Pwr MOSFETs
- Category MOSFET
Specifications
| Package | VSON-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 800 mV |
| Width | 3.3 mm |
| Qg - Gate Charge | 6.3 nC |
| Vgs - Gate-Source Voltage | 8 V |
| Fall Time | 2.9 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Texas Instruments |
| Unit Weight | 0.001101 oz |
| Number of Channels | 2 Channel |
| Tradename | NexFET |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 N-Channel |
| Forward Transconductance - Min | 39 S |
| Id - Continuous Drain Current | 27 A |
| Length | 3.3 mm |
| Rds On - Drain-Source Resistance | 33 mOhms |
| RoHS | E |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 17 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | CSD87312Q3E |
| Height | 1 mm |
| Packaging | |
| Typical Turn-On Delay Time | 7.8 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 2.5 W |
| Rise Time | 16 ns |
| Technology | Si |
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