CSD86311W1723
- Manufacturer Texas Instruments
- Part Number CSD86311W1723
- Description MOSFET Dual N-Channel Nex FET Pwr MOSFET
- Category MOSFET
Specifications
| Package | DSBGA-12 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 25 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Width | 1.74 mm |
| Qg - Gate Charge | 3.1 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Fall Time | 2.9 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Texas Instruments |
| Unit Weight | 0.000145 oz |
| Number of Channels | 2 Channel |
| Tradename | NexFET |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 N-Channel |
| Forward Transconductance - Min | 6.4 S |
| Id - Continuous Drain Current | 5 A |
| Length | 2.32 mm |
| Rds On - Drain-Source Resistance | 42 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 13.2 ns |
| Subcategory | MOSFETs |
| Series | CSD86311W1723 |
| Height | 0.62 mm |
| Packaging | |
| Typical Turn-On Delay Time | 5.4 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1.5 W |
| Rise Time | 4.3 ns |
| Technology | Si |
Need pricing on CSD86311W1723?
Tell us your quantity and target price. We reply the same business day.