CSD19538Q2
- Manufacturer Texas Instruments
- Part Number CSD19538Q2
- Description MOSFET 100V, N ch NexFET MOSFETG , single SON2x2, 59mOhm 6-WSON -55 to 150
- Category MOSFET
Specifications
| Package | WSON-FET-6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2.8 V |
| Width | 2 mm |
| Qg - Gate Charge | 5.6 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 2 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Texas Instruments |
| Number of Channels | 1 Channel |
| Tradename | NexFET |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 19 S |
| Id - Continuous Drain Current | 50 A |
| Length | 2 mm |
| Rds On - Drain-Source Resistance | 59 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 7 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | CSD19538Q2 |
| Height | 0.75 mm |
| Packaging | |
| Typical Turn-On Delay Time | 5 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 20.2 W |
| Rise Time | 3 ns |
| Technology | Si |
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