CSD19532KTTT
- Manufacturer Texas Instruments
- Part Number CSD19532KTTT
- Description MOSFET 100V, N-channel NexFET Pwr MOSFET
- Category MOSFET
Specifications
| Package | TO-263-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2.6 V |
| Width | 10.26 mm |
| Moisture Sensitive | Yes |
| Qg - Gate Charge | 44 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Type | N-Channel MOSFET |
| Fall Time | 2 ns |
| Mounting Style | SMD/SMT |
| Product | Power MOSFET |
| Product Category | MOSFET |
| Brand | Texas Instruments |
| Unit Weight | 0.068643 oz |
| Number of Channels | 1 Channel |
| Tradename | NexFET |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 200 A |
| Length | 9.25 mm |
| Rds On - Drain-Source Resistance | 5.6 mOhms |
| RoHS | E |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 14 ns |
| Subcategory | MOSFETs |
| Series | CSD19532KTT |
| Height | 19.7 mm |
| Packaging | |
| Typical Turn-On Delay Time | 9 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 250 W |
| Rise Time | 3 ns |
| Technology | Si |
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