CSD18563Q5AT
- Manufacturer Texas Instruments
- Part Number CSD18563Q5AT
- Description MOSFET 60V NCh NexFET Power MOSFET
- Category MOSFET
Specifications
| Package | VSONP-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Transistor Polarity | N-Channel |
| Development Kit | TPS40170EVM-597 |
| Vgs th - Gate-Source Threshold Voltage | 1.7 V |
| Width | 4.9 mm |
| Qg - Gate Charge | 15 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Type | NexFET Power MOSFET |
| Fall Time | 1.7 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Texas Instruments |
| Unit Weight | 0.003041 oz |
| Number of Channels | 1 Channel |
| Tradename | NexFET |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel Power MOSFET |
| Id - Continuous Drain Current | 100 A |
| Length | 5.75 mm |
| Rds On - Drain-Source Resistance | 6.8 mOhms |
| RoHS | E |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 11.4 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | CSD18563Q5A |
| Height | 1 mm |
| Packaging | |
| Typical Turn-On Delay Time | 3.2 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 116 W |
| Rise Time | 6.3 ns |
| Technology | Si |
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