CSD18537NKCS
- Manufacturer Texas Instruments
- Part Number CSD18537NKCS
- Description MOSFET 60V N-Channel NexFET Pwr MOSFET
- Category MOSFET
Specifications
| Package | TO-220-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2.6 V |
| Width | 4.7 mm |
| Qg - Gate Charge | 14 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Fall Time | 3.9 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | Texas Instruments |
| Unit Weight | 0.211644 oz |
| Number of Channels | 1 Channel |
| Tradename | NexFET |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 100 S |
| Id - Continuous Drain Current | 56 A |
| Length | 10.67 mm |
| Rds On - Drain-Source Resistance | 14 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 12.6 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | CSD18537NKCS |
| Height | 16.51 mm |
| Typical Turn-On Delay Time | 4.5 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 94 W |
| Rise Time | 3.2 ns |
| Technology | Si |
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