CSD18511KTT
- Manufacturer Texas Instruments
- Part Number CSD18511KTT
- Description MOSFET 40V, N ch NexFET MOSFETG , single D2PAK, 2.6mOhm 3-DDPAK/TO-263 -55 to 175
- Category MOSFET
Specifications
| Package | TO-263-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.5 V |
| Moisture Sensitive | Yes |
| Qg - Gate Charge | 64 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 3 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Texas Instruments |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 249 S |
| Id - Continuous Drain Current | 194 A |
| Rds On - Drain-Source Resistance | 3.2 mOhms |
| RoHS | E |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 17 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | CSD18511KTT |
| Packaging | |
| Typical Turn-On Delay Time | 8 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 188 W |
| Rise Time | 6 ns |
| Technology | Si |
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