CSD16570Q5B
- Manufacturer Texas Instruments
- Part Number CSD16570Q5B
- Description MOSFET 25-V N-channel NexFET Pwr MOSFET
- Category MOSFET
Specifications
| Package | VSON-CLIP-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 25 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.1 V |
| Width | 5 mm |
| Qg - Gate Charge | 192 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Fall Time | 72 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Texas Instruments |
| Unit Weight | 0.002677 oz |
| Number of Channels | 1 Channel |
| Tradename | NexFET |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 278 S |
| Id - Continuous Drain Current | 100 A |
| Length | 6 mm |
| Rds On - Drain-Source Resistance | 590 uOhms |
| RoHS | E |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 156 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | CSD16570Q5B |
| Height | 1 mm |
| Packaging | |
| Typical Turn-On Delay Time | 5 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 195 W |
| Rise Time | 43 ns |
| Technology | Si |
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