CMS06N10V8-HF
- Manufacturer Comchip Technology
- Part Number CMS06N10V8-HF
- Description MOSFET N-CH 100VDS 20VGS 6.8A 3.3x3.3 SPR-PAK
- Category MOSFET
Specifications
| Package | PDFN-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V |
| Qg - Gate Charge | 26.2 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 9.6 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Comchip Technology |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 6.8 A |
| Rds On - Drain-Source Resistance | 105 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 35.6 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Packaging | |
| Typical Turn-On Delay Time | 4.2 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 10.4 W |
| Rise Time | 8.2 ns |
| Technology | Si |
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