CMLDM8120 TR
- Manufacturer Central Semiconductor
- Part Number CMLDM8120 TR
- Description MOSFET 20V P-Ch FET 8.0Vgs 860mA 360mA 350mW
- Category MOSFET
Specifications
| Package | SOT-563-6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 450 mV |
| Qg - Gate Charge | 3.56 nC |
| Vgs - Gate-Source Voltage | 8 V |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Central Semiconductor |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 860 mA |
| Rds On - Drain-Source Resistance | 85 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 25 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | CMLDM8120 |
| Packaging | |
| Typical Turn-On Delay Time | 20 ns |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 350 mW |
| Technology | Si |
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