CJ3139KDW-G
- Manufacturer Comchip Technology
- Part Number CJ3139KDW-G
- Description MOSFET MOSFET DUAL P-CHANNEL
- Category MOSFET
Specifications
| Package | SOT-363-6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 350 mV |
| Qg - Gate Charge | - |
| Vgs - Gate-Source Voltage | 12 V |
| Fall Time | 20.3 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Comchip Technology |
| Unit Weight | 0.000212 oz |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Forward Transconductance - Min | 0.8 S |
| Id - Continuous Drain Current | 660 mA |
| Rds On - Drain-Source Resistance | 520 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 32.7 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Packaging | |
| Typical Turn-On Delay Time | 9 ns |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 150 mW |
| Rise Time | 5.8 ns |
| Technology | Si |
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