CGHV35060MP
- Manufacturer Wolfspeed / Cree
- Part Number CGHV35060MP
- Description RF JFET Transistors GaN HEMT 2.7-3.1GHz, 60 Watt
- Category RF JFET Transistors
Specifications
| Packaging | Reel |
| Min. Pack | 250 |
| Vds - Drain-Source Breakdown Voltage | 150 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | - 3 V |
| Application | S Band Radar and LTE base stations |
| Mounting Style | SMD/SMT |
| Product Category | RF JFET Transistors |
| Vgs - Gate-Source Breakdown Voltage | - 10 V, 2 V |
| Maximum Drain Gate Voltage | 50 V |
| Brand | Wolfspeed / Cree |
| Gain | 14.5 dB |
| Configuration | Single |
| Maximum Operating Temperature | + 107 C |
| Transistor Type | HEMT |
| Operating Temperature Range | - 40 C to + 107 C |
| Id - Continuous Drain Current | 10.4 A |
| Output Power | 75 W |
| Operating Frequency | 3.5 GHz |
| RoHS | Y |
| Product Type | RF JFET Transistors |
| Subcategory | Transistors |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 52 W |
| Technology | GaN |
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