CGHV1F025S
- Manufacturer Wolfspeed / Cree
- Part Number CGHV1F025S
- Description RF JFET Transistors GaN HEMT DC-15GHz, 25 Watt
- Category RF JFET Transistors
Specifications
| Package | DFN-12 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Development Kit | CGHV1F025S-TB |
| Vgs th - Gate-Source Threshold Voltage | - 3 V |
| Application | - |
| Moisture Sensitive | Yes |
| Type | GaN SiC HEMT |
| Fall Time | - |
| Mounting Style | SMD/SMT |
| Product | GaN HEMT |
| Product Category | RF JFET Transistors |
| Vgs - Gate-Source Breakdown Voltage | - 10 V to 2 V |
| Maximum Drain Gate Voltage | - |
| Brand | Wolfspeed / Cree |
| Shipping Restrictions | |
| Gain | 11 dB |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Class | - |
| Transistor Type | HEMT |
| P1dB - Compression Point | - |
| Operating Temperature Range | - 40 C to + 150 C |
| Forward Transconductance - Min | - |
| Id - Continuous Drain Current | 2 A |
| Length | 4 mm |
| Output Power | 25 W |
| Rds On - Drain-Source Resistance | - |
| Operating Frequency | 15 GHz |
| RoHS | Y |
| Product Type | RF JFET Transistors |
| Typical Turn-Off Delay Time | - |
| Subcategory | Transistors |
| Width | 3 mm |
| Gate-Source Cutoff Voltage | - |
| Height | 0.9 mm |
| Packaging | |
| NF - Noise Figure | - |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | - |
| Rise Time | - |
| Technology | GaN SiC |
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