CGH60030D-GP4
- Manufacturer Wolfspeed / Cree
- Part Number CGH60030D-GP4
- Description RF JFET Transistors GaN HEMT Die DC-6.0GHz, 30 Watt
- Category RF JFET Transistors
Specifications
| Package | Die |
| Packaging | Waffle |
| Min. Pack | 10 |
| Vds - Drain-Source Breakdown Voltage | 120 V |
| Transistor Polarity | N-Channel |
| Development Kit | - |
| Vgs th - Gate-Source Threshold Voltage | - 3 V |
| Application | - |
| Fall Time | - |
| Mounting Style | SMD/SMT |
| Product | GaN HEMT |
| Product Category | RF JFET Transistors |
| Vgs - Gate-Source Breakdown Voltage | - 10 V to 2 V |
| Maximum Drain Gate Voltage | - |
| Brand | Wolfspeed / Cree |
| Number of Channels | 2 Channel |
| Gain | 15 dB |
| Configuration | Dual |
| Maximum Operating Temperature | - |
| Class | - |
| Transistor Type | HEMT |
| P1dB - Compression Point | - |
| Operating Temperature Range | - |
| Id - Continuous Drain Current | 3 A |
| Length | 1.66 mm |
| Output Power | 30 W |
| Rds On - Drain-Source Resistance | 500 mOhms |
| Operating Frequency | 4 GHz to 6 GHz |
| RoHS | Y |
| Product Type | RF JFET Transistors |
| Typical Turn-Off Delay Time | - |
| Subcategory | Transistors |
| Width | 920 um |
| Gate-Source Cutoff Voltage | - |
| Height | 100 um |
| NF - Noise Figure | - |
| Minimum Operating Temperature | - |
| Pd - Power Dissipation | - |
| Rise Time | - |
| Technology | GaN |
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