Solve the future +1 910-626-85255 contact@business.com

CGH40180PP

  • Manufacturer Wolfspeed / Cree
  • Part Number CGH40180PP
  • Description RF JFET Transistors GaN HEMT DC-2.5GHz, 180 Watt
  • Category RF JFET Transistors
Specifications
Package 440199
Packaging Tube
Min. Pack 1
Vds - Drain-Source Breakdown Voltage 120 V
Transistor Polarity N-Channel
Development Kit CGH40180PP-TB
Vgs th - Gate-Source Threshold Voltage - 3 V
Application -
Fall Time -
Mounting Style Screw Mount
Product GaN HEMT
Product Category RF JFET Transistors
Vgs - Gate-Source Breakdown Voltage - 10 V to 2 V
Maximum Drain Gate Voltage -
Brand Wolfspeed / Cree
Number of Channels 2 Channel
Gain 19 dB
Configuration Dual
Maximum Operating Temperature + 150 C
Class -
Transistor Type HEMT
P1dB - Compression Point -
Operating Temperature Range -
Forward Transconductance - Min -
Id - Continuous Drain Current 24 A
Length 29 mm
Output Power 220 W
Rds On - Drain-Source Resistance -
Operating Frequency 1 GHz to 2.5 GHz
RoHS Y
Product Type RF JFET Transistors
Typical Turn-Off Delay Time -
Subcategory Transistors
Width 5.97 mm
Gate-Source Cutoff Voltage -
Height 4.34 mm
NF - Noise Figure -
Minimum Operating Temperature - 40 C
Pd - Power Dissipation -
Rise Time -
Technology GaN

Need pricing on CGH40180PP?

Tell us your quantity and target price. We reply the same business day.